The first author, USA North Carolina State University Dr. Stuart Wilkins says, they are the polar gallium nitride semiconductor is coated with a self-assembled phosphate coating way to achieve this purpose.
The researchers first through the multilayer self-assembly technique with nitrogen and gallium manufacturing gallium nitride. And then an increase of phosphate containing organic phosphorus molecules, the coating on the surface of the gallium nitride material. The use of gallium nitride semiconductor luminous efficiency is improved LED, phosphate based materials to ensure that the gallium nitride stability, the chemical reaction is not easy and substances in the environment, reduce the dissolved in solution.
"Is very important to improve the stability of gallium nitride." Wilkins said, "because this is new technology in the future in the biomedical field conditions. For example, implantable sensor."
It is understood, compared with silicon semiconductor LED common market, gallium nitride semiconductor can enhance the light output. If in the same power consumption, light volume silicon semiconductor LED reach 1000 lumens of luminous flux, gallium nitride semiconductor LED will reach more than 2000 lumens. Therefore, gallium nitride semiconductor based on LED higher luminous efficiency, energy saving. In addition, compared with the silicon semiconductor LED, gallium nitride semiconductor LED has the advantages of small volume, light weight, easy to realize integration.
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